Mechanism and energetics of self-interstitial formation and diffusion in silicon

被引：12

作者：

Vaidyanathan, Ramakrishnan ^{[1
]}

Jung, Michael Y. L. ^{[1
]}

Seebauer, Edmund G. ^{[1
]}

机构：

[1] Univ Illinois, Dept Chem & Biomol Engn, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.75.195209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent work has suggested that prior determinations of diffusion mechanism and point defect thermodynamics in silicon have been affected by nonequilibrium effects stemming from uncontrolled adsorption-induced suppression of a pathway for defect creation at the surface. Through silicon self-diffusion measurements in ultrahigh vacuum in a short-time kinetic limit, the present work shows unambiguously that interstitials are the primary mediators of self-diffusion over the range 650-1000 degrees C, moving over distances of 5-9 nm before exchanging into the lattice. The Frank-Turnbull mechanism of interstitial formation does not play a significant role.

引用

页数：5

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