The role of higher silanes in silane-discharge particle growth

被引:0
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作者
Bano, Gregory [1 ]
Horvath, Peter [1 ]
Rozsa, Karoly [1 ]
Gallagher, Alan [1 ]
机构
[1] JILA, University of Colorado, National Institute of Standards and Technology, Boulder, CO 80309-0440, United States
来源
Journal of Applied Physics | 2005年 / 98卷 / 01期
关键词
Agglomeration - Elementary particles - Film growth - Hydrogenation - Ion bombardment - Laser beams - Plasma applications - Thin films;
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摘要
A small concentration of stable higher silanes (HS) build up in an (initially) pure-silane discharge. Here it is shown that these HS cause a major increase in particle growth rates but have no effect on film growth rates. This explains the observed increase of growth rate during the first seconds of a transient discharge, as the HS build up toward a steady-state concentration of several percent. A rapid increase in particle versus film growth rate also occurs at larger values of discharge power and pressure, and the HS also appear to cause this. Possible reasons for this extreme sensitivity of particles, but not of films, to the HS are evaluated. © 2005 American Institute of Physics.
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