Optimum TiSi2 ohmic contact process for sub-100 nm devices

被引：0
|
作者：
机构：
[1] Park, Hee Sook
[2] Lee, Jong Myeong
[3] Lee, Sang Woo
[4] Park, Jea Hwa
[5] Moon, Kwang Jin
[6] Kang, Sang Bom
[7] Choi, Gil Heyun
[8] Chung, U. In
[9] Moon, Joo Tae
来源：
Park, H.S. (jumma@samsung.com) | 1804年 / Japan Society of Applied Physics卷 / 43期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [1] Optimum TiSi2 ohmic contact process for sub-100 nm devices
    Park, HS
    Lee, JM
    Lee, SW
    Park, JH
    Moon, KJ
    Kang, SB
    Choi, GH
    Chung, UI
    Moon, JT
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 1804 - 1806
  • [2] An Ohmic Contact Process for AlGaN/GaN Structures using TiSi2 Electrodes
    Okamoto, M.
    Kakushima, K.
    Kataoka, Y.
    Nishiyama, A.
    Sugii, N.
    Wakabayashi, H.
    Tsutsui, K.
    Iwai, H.
    Saito, W.
    2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2013, : 159 - 161
  • [3] Leff extraction for sub-100 nm MOSFET devices
    Ye, QY
    Biesemans, S
    SOLID-STATE ELECTRONICS, 2004, 48 (01) : 163 - 166
  • [4] Process using TiSi2 as a shallow contact metallization
    Manea, E
    Divan, R
    Stoica, M
    Dunare, S
    CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 1997, : 255 - 258
  • [5] Sub-100 nm scale polymer transfer printing process for organic photovoltaic devices
    Choi, Dae-Geun
    Lee, Ki-Joong
    Jeong, Jun-Ho
    Wang, Dong Hwan
    Park, O. Ok
    Park, Jong Hyeok
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 109 : 1 - 7
  • [6] Residual oxide layer on TiSi2 films employed in Ohmic contact structures
    Yu, Z
    Nikkel, P
    Hathcock, S
    Lu, Z
    Shaw, DM
    Anderson, ME
    Collins, GJ
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1996, 9 (03) : 329 - 334
  • [7] Quantum transport model for sub-100 nm CMOS devices
    Yu, ZP
    Yergeau, DW
    Dutton, RW
    ADVANCES IN MICROELECTRONIC DEVICE TECHNOLOGY, 2001, 4600 : 117 - 122
  • [8] Quantitative thermal probing of devices at sub-100 nm resolution
    Shi, Li
    Kwon, Ohmyoung
    Wu, Guanghua
    Majumdar, Arunava
    2000, IEEE, Piscataway, NJ, United States
  • [9] In-process measuring procedure for sub-100 nm structures
    Zimmermann, M.
    Tausendfreund, A.
    Patzelt, S.
    Goch, G.
    Kiess, S.
    Shaikh, M. Z.
    Gregoire, M.
    Simon, S.
    JOURNAL OF LASER APPLICATIONS, 2012, 24 (04)
  • [10] Experimental methodology of contact edge roughness on sub-100 nm pattern
    Lee, TY
    Ihm, D
    Kang, HC
    Lee, JB
    Lee, BH
    Chin, SB
    Cho, DH
    Kim, YF
    Yang, HD
    Yang, KM
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 : 623 - 632
12345