Fabrication of 30 nm gate length electrically variable shallow-junction metal-oxide-semiconductor field-effect transistors using a calixarene resist

被引：0

|

作者：

NEC Fundamental Research Lab, Ibaraki, Japan ^{[1
]}

机构：

来源：

J Vac Sci Technol B | / 6卷 / 2806-2808期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[21] INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
SEQUIN, C
BALDINGER, E
SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1527 - +
[22] A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH A 20-NM CHANNEL LENGTH
HARTSTEIN, A
ALBERT, NF
BRIGHT, AA
KAPLAN, SB
ROBINSON, B
TORNELLO, JA
JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2493 - 2495
[23] On the threshold voltage of metal-oxide-semiconductor field-effect transistors
Shi, XJ
Wong, M
SOLID-STATE ELECTRONICS, 2005, 49 (07) : 1179 - 1184
[24] Fabrication and characterization of metal-oxide-semiconductor field-effect transistors and gated diodes using Ta2O5 gate oxide
Yu, JC
Lai, BC
Lee, JY
IEEE ELECTRON DEVICE LETTERS, 2000, 21 (11) : 537 - 539
[25] Metal-oxide-semiconductor field-effect transistor junction requirements
Duane, Michael
Lynch, William
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (01):
[26] INVESTIGATION OF SURFACE MOBILITY IN THIN-GATE OXIDE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
CHAN, TW
CHENG, YC
JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4245 - 4250
[27] ELECTROMETER FOR IONIZATION CHAMBERS USING METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
MCCASLIN, JB
REVIEW OF SCIENTIFIC INSTRUMENTS, 1964, 35 (11): : 1587 - &
[28] Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors
Nakajima, Y
Horiguchi, S
Shoji, M
Omura, Y
JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) : 4788 - 4796
[29] Silicon complementary metal-oxide-semiconductor field-effect transistors with dual work function gate
Na, Kee-Yeol
Kim, Yeong-Seuk
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (12): : 9033 - 9036
[30] Fabrication of metal-oxide-semiconductor field-effect transistors using crystalline γ-Al2O3 films as the gate dielectrics
Okada, T
Sawada, K
Ishida, M
Shahjahan, M
APPLIED PHYSICS LETTERS, 2004, 85 (21) : 5004 - 5006

← 1 2 3 4 5 →