Fabrication of 30 nm gate length electrically variable shallow-junction metal-oxide-semiconductor field-effect transistors using a calixarene resist

被引：0
|
作者：
NEC Fundamental Research Lab, Ibaraki, Japan [1 ]
机构：
来源：
J Vac Sci Technol B | / 6卷 / 2806-2808期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate
    Qingpeng Wang
    Jin-Ping Ao
    Pangpang Wang
    Ying Jiang
    Liuan Li
    Kazuya Kawaharada
    Yang Liu
    Frontiers of Materials Science, 2015, 9 : 151 - 155
  • [32] GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate
    Wang, Qingpeng
    Ao, Jin-Ping
    Wang, Pangpang
    Jiang, Ying
    Li, Liuan
    Kawaharada, Kazuya
    Liu, Yang
    FRONTIERS OF MATERIALS SCIENCE, 2015, 9 (02) : 151 - 155
  • [33] Silicon complementary metal-oxide-semiconductor field-effect transistors with dual work function gate
    Na, Kee-Yeol
    Kim, Yeong-Seuk
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (12): : 9033 - 9036
  • [34] COMPARISON OF MEASUREMENT TECHNIQUES FOR GATE SHORTENING IN SUBMICROMETER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    BHATTACHARYA, P
    BARI, M
    RAO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (08): : 3409 - 3413
  • [35] AN IMPROVED RESISTOR SHUNTED JUNCTION MODEL OF SUPERCONDUCTING METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    LAI, H
    QIAN, G
    CAHAY, M
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) : 3560 - 3565
  • [36] Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors
    Ferain, Isabelle
    Colinge, Cynthia A.
    Colinge, Jean-Pierre
    NATURE, 2011, 479 (7373) : 310 - 316
  • [37] Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors
    Li, Xu
    Hill, Richard J. W.
    Longo, Paolo
    Holland, Martin C.
    Zhou, Haiping
    Thoms, Stephen
    Macintyre, Douglas S.
    Thayne, Iain G.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (06): : 3153 - 3157
  • [38] The impact of gate oxide scaling (3.2-1.2 nm) on sub-100 nm complementary metal-oxide-semiconductor field-effect transistors
    Yeh, WK
    Lin, CY
    THIN SOLID FILMS, 2002, 419 (1-2) : 218 - 224
  • [39] QUANTUM INTERFERENCE IN ULTRASHORT CHANNEL LENGTH SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    HARTSTEIN, A
    APPLIED PHYSICS LETTERS, 1991, 59 (16) : 2028 - 2030
  • [40] FABRICATION OF Y-GATE, SUBMICRON GATE LENGTH GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    REN, F
    PEARTON, SJ
    LOTHIAN, JR
    ABERNATHY, CR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2603 - 2606
12345