HDPCVD films enabling shallow trench isolation

被引：0

作者：

Van Cleemput, Patriek ^{[1
]}

Ery, H.W. ^{[1
]}

van Schravendijk, Bart ^{[1
]}

van den Hoek, Wilbert ^{[1
]}

机构：

[1] Novellus Systems, San Jose, United States

来源：

Semiconductor International | 1997年 / 20卷 / 08期

关键词：

Chemical vapor deposition - Dielectric films - MOS devices - Oxidation - Reactive ion etching - Silicon wafers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Commercial MOS isolation techniques are reviewed and the evolution from thick oxide to trench isolation with increased miniaturization is discussed. The industry trend to move from local oxidation to trench isolation is presented in a technical and economic context. Recent development of highly selective oxide:nitride CMP slurries to enable STI planarization without RIE assist is reviewed. HDPCVD gap fill technology applied to STI is compared to other CVD technologies.

引用

页码：179 / 180

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