Challenges in hardening technologies using shallow-trench isolation

被引:0
|
作者
Sandia Natl Lab, Albuquerque, United States [1 ]
机构
来源
IEEE Trans Nucl Sci | / 6 pt 1卷 / 2584-2592期
关键词
The authors thank P. S. Winokur; J; R; Schwank; C; Applett; S; Custer; D; L; Hetherington; M; Fleetwood; and R. Jarecki for stimulating discussions; and R. A. Loemker; Riewe; and L. P. Slchanwald for experimental support. We also thank the staff of Sandia’s Microelectronics Development Laboratory for providing process support for this work. Sandia is a niultiprogram laboratory operated by Sandia Corporation; a Lockheed Martin Company; for the United States Department of Energy under Contract DE-ACO4-94AL85O00;
D O I
暂无
中图分类号
学科分类号
摘要
34
引用
收藏
相关论文
共 50 条
  • [1] Challenges in hardening technologies using shallow-trench isolation
    Shaneyfelt, MR
    Dodd, PE
    Draper, BL
    Flores, RS
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) : 2584 - 2592
  • [2] Shallow-trench isolation with raised-field-oxide structure
    Chen, Coming, 1600, JJAP, Tokyo, Japan (39):
  • [3] Shallow-trench isolation with raised-field-oxide structure
    Chen, CM
    Chang, CY
    Chou, JW
    Lur, W
    Sun, SW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (3A): : 1080 - 1084
  • [4] A novel planarization of oxide-filled shallow-trench isolation
    Cheng, JY
    Lei, TF
    Chao, TS
    Yen, DLW
    Lin, CJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (01) : 315 - 320
  • [5] Choices and challenges for shallow trench isolation
    Peters, Laura
    Semiconductor International, 1999, 22 (04):
  • [6] Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides
    Turowski, M
    Raman, A
    Schrimpf, RD
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3166 - 3171
  • [7] Shallow trench isolation for advanced ULSI CMOS technologies
    Nandakumar, M
    Chatterjee, A
    Sridhar, S
    Joyner, K
    Rodder, M
    Chen, IC
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 133 - 136
  • [8] Nanotopography impact in shallow-trench isolation chemical mechanical polishing—analysis method and consumable dependence
    Jea-Gun Park
    Takeo Katoh
    Ungyu Paik
    Journal of Materials Research, 2004, 19 : 1783 - 1790
  • [9] Nanotopography impact in shallow-trench isolation chemical mechanical polishing - analysis method and consumable dependence
    Park, JG
    Katoh, T
    Paik, U
    JOURNAL OF MATERIALS RESEARCH, 2004, 19 (06) : 1783 - 1790
  • [10] Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35μm SiGeBiCMOS technology
    Niu, G
    Mathew, SJ
    Banerjee, G
    Cressler, JD
    Clark, SD
    Palmer, MJ
    Subbanna, S
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (06) : 1841 - 1847