Basic Static Properties of the Negative Differential Mobility in Semiconductor Devices.

被引：0
|
作者：
Goral, Arkadiusz
机构：
来源：
Elektronika | 1973年 / 14卷 / 03期
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中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A quasistatic analysis is carried out using a theorem of linearly approximated ″velocity-field″ characteristic applied to GaAs and obtained experimentally by B. Fay and G. S. Kino. A quasistatic distribution of electric field is then examined corresponding to a ″matured″ electric domain by means of a relation equivalent to Butcher's ″equal field″ rule referred to the speed vs electric field characteristic of GaAs.
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页码：81 / 84
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