Negative differential resistance behaviour in OPE molecular devices with semiconductor electrodes

被引：10
|
作者：
Tang, Gui-Ping [1 ,2 ,3 ]
Fan, Zhi-Qiang [1 ,2 ]
Zhang, Xiao-Jiao [1 ,2 ]
Ren, Yun [1 ,2 ]
Chen, Ke-Qiu [1 ,2 ]
机构：
[1] Hunan Univ, Key Lab Micronano Optoelect Devices, Minist Educ, Changsha 410082, Hunan, Peoples R China
[2] Hunan Univ, Dept Appl Phys, Changsha 410082, Hunan, Peoples R China
[3] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410076, Hunan, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 17期
基金：
中国国家自然科学基金;
关键词：
ROOM-TEMPERATURE; TRANSPORT-PROPERTIES; CONDUCTANCE; TRANSITION; JUNCTIONS; SURFACES; THIOL;
D O I：
10.1088/0022-3727/42/17/175104
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using nonequilibrium Green's functions in combination with density-functional theory, we investigate the electronic transport properties of oligo(phenylene ethynylene) (OPE) molecular devices attached to semiconductor electrodes. The results show that the properties of the electronic transport are different from those of the OPE molecular devices attached to metal electrodes. Negative differential resistance can be observed within a certain bias voltage range. A mechanism for the negative differential resistance is suggested.
引用
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页数：6
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