Modeling the semiconductor devices with negative differential resistance based on nitride nanowires

被引：2

作者：

Mozharov, A. M. ^{[1
,2
]}

Komissarenko, F. E. ^{[2
]}

Bolshakov, A. D. ^{[1
]}

Fedorov, V. V. ^{[1
]}

Sapunov, G. A. ^{[1
]}

Cirlin, G. E. ^{[1
,3
,4
,5
]}

Mukhin, I. S. ^{[1
,2
]}

机构：

[1] St Petersburg Acad Univ, Khlopina 8-3, St Petersburg 194021, Russia

[2] ITMO Univ, St Petersburg 197101, Russia

[3] RAS, Inst Analyt Instrumentat, St Petersburg 190103, Russia

[4] St Petersburg State Univ, St Petersburg 199034, Russia

[5] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

来源：

4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | 2017年 / 917卷

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1088/1742-6596/917/8/082017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We proposed a numerical model of the Gunn diode and resonant diode based on a single nitride nanowire. Important model parameters needed for development of the considered devices, namely layers thickness, composition and doping level were evaluated. It has been shown theoretically that the single GaN nanowire based Gunn diode is capable to operate in over 1 THz frequency regime.

引用

页数：5

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