Native point defects in low-temperature-grown GaAs

被引:0
|
作者
机构
来源
Appl Phys Lett | / 2卷 / 279期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Refractive index and absorption changes in low-temperature-grown GaAs
    Loka, HS
    Benjamin, SD
    Smith, PWE
    [J]. OPTICS COMMUNICATIONS, 1998, 155 (1-3) : 206 - 212
  • [32] MICROSTRUCTURE OF ANNEALED LOW-TEMPERATURE-GROWN GAAS-LAYERS
    LILIENTALWEBER, Z
    CLAVERIE, A
    WASHBURN, J
    SMITH, F
    CALAWA, R
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (02): : 141 - 146
  • [33] Terahertz photomixing with diode lasers in low-temperature-grown GaAs
    [J]. McIntosh, K.A., 1600, American Inst of Physics, Woodbury, NY, United States (67):
  • [34] An optical correlator using a low-temperature-grown GaAs photoconductor
    Verghese, S
    Zamdmer, N
    Hu, Q
    Brown, ER
    Forster, A
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (06) : 842 - 844
  • [35] Characterization of femtosecond low-temperature-grown GaAs photoconductive switch
    Lin, WZ
    Liu, ZG
    Liao, R
    Zhang, HC
    Guo, B
    Wen, JH
    Lai, TS
    [J]. CHINESE PHYSICS LETTERS, 2002, 19 (04) : 557 - 559
  • [36] Influence of Be doping on material properties of low-temperature-grown GaAs
    Marcinkevicius, S
    Gaarder, A
    Siegert, J
    Roux, JF
    Coutaz, JL
    Wolos, A
    Kaminska, M
    Adomavicius, R
    Bertulis, K
    Krotkus, A
    [J]. DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III, 2002, 719 : 23 - 28
  • [37] Interaction of localized spins in low-temperature-grown GaAs layers
    Jung, D. W.
    Noh, J. P.
    Otsuka, N.
    [J]. PHYSICA B-CONDENSED MATTER, 2010, 405 (19) : 4133 - 4138
  • [38] Capacitance study of electron traps in low-temperature-grown GaAs
    Brunkov, PN
    Gutkin, AA
    Moiseenko, AK
    Musikhin, YG
    Chaldyshev, VV
    Cherkashin, NN
    Konnikov, SG
    Preobrazhenskii, VV
    Putyato, MA
    Semyagin, BR
    [J]. SEMICONDUCTORS, 2004, 38 (04) : 387 - 392
  • [39] Threading dislocation reduction mechanisms in low-temperature-grown GaAs
    Mathis, SK
    Wu, XH
    Romanov, AE
    Speck, JS
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (09) : 4836 - 4842
  • [40] Capacitance study of electron traps in low-temperature-grown GaAs
    P. N. Brunkov
    A. A. Gutkin
    A. K. Moiseenko
    Yu. G. Musikhin
    V. V. Chaldyshev
    N. N. Cherkashin
    S. G. Konnikov
    V. V. Preobrazhenskii
    M. A. Putyato
    B. R. Semyagin
    [J]. Semiconductors, 2004, 38 : 387 - 392