REACTIVE ION BEAM ETCHING AND ITS APPLICATION.

被引：0
|
作者：
Jin Weixin
Meng Xianguang
You Dawei
Xu Xingcai
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1983年 / 4卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
3
引用
收藏
页码：97 / 100
相关论文
共 50 条
  • [31] THE SIGNIFICANCE OF REACTIVE IONS AND REACTIVE NEUTRALS IN ION-BEAM-ASSISTED ETCHING
    CHINN, JD
    WOLF, ED
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 410 - 415
  • [32] POLYMER DEGRADATION IN REACTIVE ION ETCHING AND ITS POSSIBLE APPLICATION TO ALL DRY PROCESSES
    HIRAOKA, H
    WELSH, LW
    [J]. RADIATION PHYSICS AND CHEMISTRY, 1981, 18 (5-6): : 907 - 911
  • [33] CLASSIFICATION OF ETCHING MECHANISM IN REACTIVE ION-BEAM ETCH
    TADOKORO, T
    KOYAMA, F
    IGA, K
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05): : 1111 - 1114
  • [34] ION SOURCES FOR DRY ETCHING - ASPECTS OF REACTIVE ION-BEAM ETCHING FOR SI TECHNOLOGY (INVITED)
    SCHEER, HC
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (05): : 3050 - 3057
  • [35] REACTIVE ION BEAM ETCHING OF GAAS IN CCL4.
    POWELL, R.A.
    [J]. 1982, V 21 (N 3): : 170 - 172
  • [36] Sample preparation for electron beam testing with reactive ion etching
    Numajiri, T
    Suzuki, S
    Omata, T
    Yoshida, N
    Tsujita, Y
    [J]. PROCEEDINGS OF THE 1997 6TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 1997, : 56 - 61
  • [37] REACTIVE ION BEAM ETCHING CHARACTERISTIC OF LiNbO3.
    Ren, Congxin
    Jie, Yang
    Yanfang, Zheng
    Lizhi, Chen
    Guoliang, Chen
    Shichang, Tsou
    [J]. 1600, (B19-20):
  • [38] ARGON AND REACTIVE ION-BEAM ETCHING FOR SAW DEVICES
    CHAPMAN, RE
    [J]. VACUUM, 1984, 34 (3-4) : 417 - 424
  • [39] Reactive ion beam etching of InSb and InAs with ultrasmooth surfaces
    Frost, F
    Schindler, A
    Bigl, F
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (05) : 523 - 527
  • [40] Reactive ion beam etching effects on maskless PZT properties
    Soyer, C
    Cattan, E
    Remiens, D
    [J]. INTEGRATED FERROELECTRICS, 2002, 48 : 221 - 229
12345