共 50 条
- [1] REACTIVE ION-BEAM ETCHING OF GAAS IN CCL4 [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1982, 21 (03): : L170 - L172
- [3] REACTIVE ION-BEAM ETCHING OF MOSI2 IN CCL4 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1164 - 1167
- [5] REACTIVE ION ETCHING OF GAAS IN CCL4/H2 AND CCL4/O2 [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3131 - 3135
- [6] CCl4-based reactive ion etching of semi-insulating GaAs and InP [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 2006, 56 : B1169 - B1173
- [8] PARAMETRIC INVESTIGATIONS AND SIMULATIONS OF ION-BEAM ETCHING AND REACTIVE ION ETCHING MECHANISMS FOR GAAS COMPOUNDS [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 383 - 386
- [9] SURFACE PATTERNING OF GAAS BY CCL2F2 REACTIVE ION ETCHING [J]. VACUUM, 1988, 38 (07) : 519 - 525