ANISOTROPIC DRY ETCHING OF GaAs AND SILICON USING CCl4.

被引：5
|
作者：
Unger, P. [1 ]
Beneking, H. [1 ]
机构：
[1] Aachen Technical Univ, Inst of, Semiconductor Electronics, Aachen,, West Ger, Aachen Technical Univ, Inst of Semiconductor Electronics, Aachen, West Ger
来源：
Microelectronic Engineering | 1985年 / 3卷 / 1-4期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
10.1016/0167-9317(85)90054-1
中图分类号：
学科分类号：
摘要：
INTEGRATED CIRCUIT MANUFACTURE
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页码：435 / 442
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