Efficient screening method for DRAM memory cell capacitor dielectric

被引:0
|
作者
Furutani, Kiyohiro [1 ]
Suwa, Makoto [1 ]
Arimoto, Kazutami [1 ]
Mashiko, Koichiro [1 ]
Yamada, Michihiro [1 ]
Matsumoto, Masatoshi [1 ]
机构
[1] Mitsubishi Electric Corp, Itami, Japan
关键词
MOS Dynamic RAMs (DRAMs);
D O I
暂无
中图分类号
学科分类号
摘要
(Edited Abstract)
引用
收藏
页码:81 / 89
相关论文
共 50 条
  • [21] HSG storage capacitor dielectric reliability of 0.13 μm embedded DRAM CMOS technology
    Bruyère, S
    Roy, D
    Jacques, D
    Boccaccio, C
    41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, : 298 - 302
  • [22] COMPARISON OF DRAM CAPACITOR DIELECTRIC BY STORED CHARGE AND HOLDING TIME USING TQV CHART
    TAGUCHI, M
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) : 642 - 644
  • [23] Study of Metal-Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor
    Lim, HanJin
    Choi, Jae Hyoung
    Cho, Gihee
    Chang, Jaewan
    Kim, Younsoo
    Jung, Hyung-Suk
    Shin, Kyoung-Sub
    Seo, Hyungtak
    Jeon, Hyeongtag
    ADVANCED MATERIALS TECHNOLOGIES, 2023, 8 (20):
  • [24] Future directions for DRAM memory cell technology
    Nitayama, A
    Kohyama, Y
    Hieda, K
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 355 - 358
  • [25] A Novel Method to Inspect Deep Trench Capacitor Planar Profiles in DRAM
    Lue, J. L.
    Huang, A.
    Wang, T.
    ISTFA 2006, 2006, : 185 - 187
  • [26] 3D STACKED CAPACITOR CELL FOR MEGA BIT DRAM
    NAKANO, T
    YABU, T
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1988, 24 (04): : 301 - 317
  • [27] MEASUREMENTS OF LEAKAGE CURRENTS AND THE CAPACITANCE OF THE STORAGE CAPACITOR IN A SINGLE DRAM CELL
    MATSUDA, JI
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) : 391 - 397
  • [28] 3D stacked capacitor cell for Mega bit DRAM
    Nakano, Tomio
    Yabu, Takashi
    Fujitsu Scientific and Technical Journal, 1988, 24 (04): : 301 - 317
  • [29] Modeling and simulation of a DRAM cell capacitor with multiple-level interconnects
    Kwon, O
    Jung, H
    Yoon, S
    Won, T
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 (01) : 100 - 105
  • [30] LEAKAGE CURRENT REDUCTION IN SURROUNDING HI-CAPACITOR DRAM CELL
    FUSE, G
    NAKAO, I
    ICHIKAWA, Y
    KUDO, C
    YABU, T
    UNO, A
    SAWADA, K
    NAITO, Y
    INOUE, M
    IWASAKI, H
    IEICE TRANSACTIONS ON COMMUNICATIONS ELECTRONICS INFORMATION AND SYSTEMS, 1991, 74 (04): : 812 - 817