FINE PATTERN FABRICATION USING ION BEAM ETCHING.

被引：0
|
作者：
Furuya, Shigeru
Kobayashi, Koichi
Yamamoto, Sumio
机构：
来源：
Fujitsu Scientific and Technical Journal | 1979年 / 15卷 / 04期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
INTEGRATED CIRCUITS - Masks
引用
收藏
页码：111 / 120
相关论文
共 50 条
  • [21] MAGNETRON-ENHANCED REACTIVE ION ETCHING.
    Grebe, K.R.
    Palmer, M.J.
    Yeh, J.T.
    IBM technical disclosure bulletin, 1983, 26 (7 B): : 3848 - 3851
  • [22] SHAPING OF FINE-TIP EMITTERS BY ELECTROCHEMICAL ETCHING.
    Kovbasa, S.I.
    Valueva, L.E.
    Ventova, I.D.
    1600, (20):
  • [23] Fabrication of serpentine shaped laser diode using reactive ion beam etching
    Choi, JH
    Hong, SC
    Kwon, YS
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 1013 - 1018
  • [24] Nano-fabrication of GaN pillars using focused ion beam etching
    Kuball, M
    Morrissey, FH
    Benyoucef, M
    Harrison, I
    Korakakis, D
    Foxon, CT
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 355 - 358
  • [25] Fine pattern fabrication of α-type Ta on a membrane for X-ray mask absorber using ECR ion stream etching
    Tsuchizawa, T
    Takahashi, C
    Shimada, M
    Uchiyama, S
    Ono, T
    Oda, M
    MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) : 595 - 598
  • [26] Fabrication of submicron topology with ion and neutral beam etching
    Soshnikov, IP
    Lunev, AV
    Gaevski, ME
    Rotkina, LG
    Bert, NA
    EMERGING LITHOGRAPHIC TECHNOLOGIES, 1997, 3048 : 404 - 408
  • [27] Photoluminescence study of AlGaAs/GaAs heterostructure subsequent to Ga plus focused ion beam etching.
    Voznyuk, G. V.
    Levitskii, I. V.
    Mitrofanov, M. I.
    Nikolaev, D. N.
    Evtikhiev, V. P.
    2018 INTERNATIONAL CONFERENCE LASER OPTICS (ICLO 2018), 2018, : 167 - 167
  • [28] OXYGEN ION-BEAM ETCHING FOR PATTERN TRANSFER
    GOKAN, H
    ITOH, M
    ESHO, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 34 - 37
  • [29] Fabrication of 2-D photonic crystals by deep etching.
    Chelnokov, A
    LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 143 - 144
  • [30] Dry etching of GaN using reactive ion beam etching and chemically assisted reactive ion beam etching
    Lee, JW
    Park, HS
    Park, YJ
    Yoo, MC
    Kim, TI
    Kim, HS
    Yeom, GY
    GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 373 - 377
12345