Fine pattern fabrication of α-type Ta on a membrane for X-ray mask absorber using ECR ion stream etching

被引：3

作者：

Tsuchizawa, T ^{[1
]}

Takahashi, C ^{[1
]}

Shimada, M ^{[1
]}

Uchiyama, S ^{[1
]}

Ono, T ^{[1
]}

Oda, M ^{[1
]}

机构：

[1] NTT, Telecommun Energy Labs, Atsugi, Kanagawa 2430198, Japan

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(00)00386-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the etching of alpha-Ta by an ECR ion stream with Cl-2 for use in the x-ray mask process. Fine alpha-Ta patterns with a vertical shape and accurate width were obtained at a low pressure of about 1.5x10(-4) Torr and a high substrate temperature of about 130 degrees C. A temperature control system using He gas was added to the wafer holder to control the membrane temperature during etching. This system enabled us to fabricate uniform 100-nm Ta patterns with precise well shape on a membrane. Over the window region, the variation in pattern width is less than +/-10%.

引用

页码：595 / 598

页数：4

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