ECR etching of α-Ta for x-ray mask absorber using chlorine and fluoride gas mixture

被引：0
|
作者：
Tsuchizawa, T [1 ]
Iriguchi, H [1 ]
Takahashi, C [1 ]
Shimada, M [1 ]
Uchiyama, S [1 ]
Oda, M [1 ]
机构：
[1] NTT, Telecommun Energy Labs, Atsugi, Kanagawa 2430198, Japan
来源：
MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS | 2000年
关键词：
D O I：
10.1109/IMNC.2000.872617
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：50 / 51
页数：2
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