Precise reactive ion etching of Ta absorber on X-ray masks

被引：0
|
作者：
Nakaishi, Masafumi [1 ]
Sugishima, Kenji [1 ]
机构：
[1] Fujitsu Ltd, Kawasaki, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 11 B期
关键词：
Lithography;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：3065 / 3069
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