Effects of Underlayer Dielectric on the Thermal Characteristics and Electromigration Resistance of Copper Interconnect

被引:0
|
作者
机构
[1] Chin, Yu-Lung
[2] Chiou, Bi-Shiou
来源
Chin, Y.-L. | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Fast Electromigration Immortality Analysis for Multisegment Copper Interconnect Wires
    Sun, Zeyu
    Demircan, Ertugrul
    Shroff, Mehul D.
    Cook, Chase
    Tan, Sheldon X. -D.
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2018, 37 (12) : 3137 - 3150
  • [22] FATAL ELECTROMIGRATION VOIDS IN NARROW ALUMINUM-COPPER INTERCONNECT
    ROSE, JH
    APPLIED PHYSICS LETTERS, 1992, 61 (18) : 2170 - 2172
  • [23] Analysis of thermal stresses in copper interconnect/low-k dielectric structures
    Y. -L. Shen
    Journal of Electronic Materials, 2005, 34 : 497 - 505
  • [24] ELECTROMIGRATION CHARACTERISTICS OF COPPER INTERCONNECTS
    TAO, J
    CHEUNG, NW
    HU, CM
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (05) : 249 - 251
  • [25] Analysis of thermal stresses in copper interconnect/low-k dielectric structures
    Shen, YL
    JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (05) : 497 - 505
  • [26] Finite Element Analysis of Electromigration Reliability in Copper Chip Interconnect
    Tian, Yanhong
    Long, Bo
    Wang, Chunqing
    2010 11TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP), 2010, : 1124 - 1127
  • [27] Electromigration resistance in a short three-contact interconnect tree
    Chang, C. W.
    Choi, Z. -S.
    Thompson, C. V.
    Gan, C. L.
    Choi, W. K.
    Hwang, N.
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)
  • [28] Effects of electromigration-induced void dynamics on the evolution of electrical resistance in metallic interconnect lines
    Cho, J
    Gungor, MR
    Maroudas, D
    APPLIED PHYSICS LETTERS, 2005, 86 (24) : 1 - 3
  • [29] Effect of the tantalum barrier layer on the electromigration and stress migration resistance of physical-vapor-deposited copper interconnect
    Chin, Yu-Lung
    Chiou, Bi-Shiou
    Wu, Wen-Fa
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (5 A): : 3057 - 3064
  • [30] Saturated voids in interconnect lines due to thermal strains and electromigration
    Zhang, Z
    Suo, ZG
    He, J
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)