Effects of Underlayer Dielectric on the Thermal Characteristics and Electromigration Resistance of Copper Interconnect

被引：0
|
作者：
机构：
[1] Chin, Yu-Lung
[2] Chiou, Bi-Shiou
来源：
Chin, Y.-L. | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Effects of underlayer dielectric on the thermal characteristics and electromigration resistance of copper interconnect
    Chin, YL
    Chiou, BS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (12): : 7502 - 7509
  • [2] Copper/carbon nanotube composite interconnect for enhanced electromigration resistance
    Chai, Yang
    Chan, Philip C. H.
    Fu, Yunyi
    Chuang, Y. C.
    Liu, C. Y.
    58TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, PROCEEDINGS, 2008, : 412 - +
  • [3] Electromigration in width transition copper interconnect
    Roy, Arijit
    Hou, Yuejin
    Tan, Cher Ming
    MICROELECTRONICS RELIABILITY, 2009, 49 (9-11) : 1086 - 1089
  • [4] Effects of deposition conditions of Al and Ti underlayer on electromigration reliability for deep-submicron interconnect metallization
    Y. B. Park
    D. W. Lee
    H. H. Ryu
    W. Lee
    Journal of Electronic Materials, 2001, 30 : 1569 - 1577
  • [5] Effects of deposition conditions of Al and Ti underlayer on electromigration reliability for deep-submicron interconnect metallization
    Park, YB
    Lee, DW
    Ryu, HH
    Lee, W
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (12) : 1569 - 1577
  • [6] Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical design
    Lin, MH
    Lin, YL
    Chen, JM
    Yeh, MS
    Chang, KP
    Su, KC
    Wang, TH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) : 2602 - 2608
  • [7] Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment
    Lin, MH
    Lin, YL
    Chang, KP
    Su, KC
    Wang, TH
    MICROELECTRONICS RELIABILITY, 2005, 45 (7-8) : 1061 - 1078
  • [8] The improvement of copper interconnect electromigration resistance by cap/dielectic interface treatment and geometrical design
    Lin, MH
    Lin, YL
    Chen, JM
    Tsai, CC
    Yeh, MS
    Liu, CC
    Hsu, S
    Wang, CH
    Sheng, YC
    Chang, KP
    Su, KC
    Chang, YJ
    Wang, T
    2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 229 - 233
  • [9] Effects of width scaling and layout variation on dual damascene copper interconnect electromigration
    Lin, M. H.
    Chang, K. P.
    Su, K. C.
    Wang, Tahui
    MICROELECTRONICS RELIABILITY, 2007, 47 (12) : 2100 - 2108
  • [10] Defect and electromigration characterization of a two level copper interconnect
    Parikh, S
    Educato, J
    Wang, A
    Zheng, B
    Wijekoon, K
    Chen, J
    Rana, V
    Cheung, R
    Dixit, G
    PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, : 183 - 185
12345