MOCVD GROWTH OF InP ON 4-INCH Si SUBSTRATE WITH GaAs INTERMEDIATE LAYER.

被引：0
|
作者：
Seki, Akinori [1 ]
Konushi, Fumihiro [1 ]
Kudo, Jun [1 ]
Kakimoto, Seizo [1 ]
Fukushima, Takashi [1 ]
Koba, Masayoshi [1 ]
机构：
[1] SHARP Corp, Tenri, Jpn, SHARP Corp, Tenri, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1587 / 1589
相关论文
共 50 条
  • [1] MOCVD GROWTH OF INP ON 4-INCH SI SUBSTRATE WITH GAAS INTERMEDIATE LAYER
    SEKI, A
    KONUSHI, F
    KUDO, J
    KAKIMOTO, S
    FUKUSHIMA, T
    KOBA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1587 - L1589
  • [2] Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer
    Ishikawa, H
    Kato, M
    Hao, MS
    Egawa, T
    Jimbo, T
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2177 - 2180
  • [3] SELECTIVE MOCVD GROWTH OF GAAS ON SI SUBSTRATE WITH SUPERLATTICE INTERMEDIATE LAYERS
    SOGA, T
    SAKAI, S
    UMENO, M
    HATTORI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (02): : 252 - 255
  • [4] SELECTIVE MOCVD GROWTH OF GaAs ON Si SUBSTRATE WITH SUPERLATTICE INTERMEDIATE LAYERS.
    Soga, Tetsuo
    Sakai, Shiro
    Umeno, Masayoshi
    Hattori, Shuzo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (02): : 252 - 255
  • [5] Improvement of microscopic and macroscopic uniformity in 4-inch InP substrate for IC application by Vertical Boat Growth
    Kawase, T
    Hosaka, N
    Hashio, K
    Matsushima, M
    Sakurada, T
    Nakai, R
    GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002, 2002, : 147 - 150
  • [6] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
    AKIYAMA, M
    KAWARADA, Y
    KAMINISHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845
  • [7] Heteroepitaxial InP growth on a Si(001) substrate using a Ge buffer layer in MOCVD
    Shin, Keun Wook
    Lee, Sang-Moon
    Lee, Kiyoung
    Yoon, Euijoon
    2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM, 2023,
  • [8] Self-organized growth of InP on GaAs substrate by MOCVD
    Wang, BZ
    Chua, SJ
    ADVANCED MICROELECTRONIC PROCESSING TECHNIQUES, 2000, 4227 : 20 - 24
  • [9] Development of 4-inch Fe-doped InP substrate using VB method
    Hashio, Katsushi
    Hosaka, Noriyuki
    Matsushima, Masato
    Sakuraba, Takashi
    Kawasake, Tomohiro
    Nakai, Ryusuke
    SEI Technical Review, 2003, (56): : 41 - 45
  • [10] GROWTH OF GAAS AND INP ON SI USING PLASMA STIMULATED MOCVD
    LEIBER, J
    BRAUERS, A
    HEINECKE, H
    LUTH, H
    BALK, P
    JOURNAL OF CRYSTAL GROWTH, 1989, 96 (03) : 483 - 489
12345