MOCVD GROWTH OF InP ON 4-INCH Si SUBSTRATE WITH GaAs INTERMEDIATE LAYER.

被引：0
|
作者：
Seki, Akinori [1 ]
Konushi, Fumihiro [1 ]
Kudo, Jun [1 ]
Kakimoto, Seizo [1 ]
Fukushima, Takashi [1 ]
Koba, Masayoshi [1 ]
机构：
[1] SHARP Corp, Tenri, Jpn, SHARP Corp, Tenri, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 10期
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页码：1587 / 1589
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