GROWTH OF 4-INCH DIAMETER SEMI-INSULATING LEC GAAS WITH APPLIED MAGNETIC-FIELD

被引：0
|
作者：
OZAWA, S
NAKAYAMA, H
SHIINA, Y
OHASHI, E
KIKUTA, T
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES <D> | 1989年 / 96期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
4inch diameter 25cm long semi-insulating GaAs crystals have been grown from 8 to 13kg melts using 6 to 8inch diameter pBN crucibles. The growth stability is much improved by the application of an axial magnetic field of 3kGauss. The stress distribution calculated using actual geometry at each growth stage was in good agreement with dislocation distributions measured 20 approximately 25mm from the growth interface.
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页码：343 / 346
页数：4
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