GROWTH OF 4-INCH DIAMETER SEMI-INSULATING LEC GAAS WITH APPLIED MAGNETIC-FIELD

被引：0
|
作者：
OZAWA, S
NAKAYAMA, H
SHIINA, Y
OHASHI, E
KIKUTA, T
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES <D> | 1989年 / 96期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
4inch diameter 25cm long semi-insulating GaAs crystals have been grown from 8 to 13kg melts using 6 to 8inch diameter pBN crucibles. The growth stability is much improved by the application of an axial magnetic field of 3kGauss. The stress distribution calculated using actual geometry at each growth stage was in good agreement with dislocation distributions measured 20 approximately 25mm from the growth interface.
引用
收藏
页码：343 / 346
页数：4
相关论文
共 50 条
  • [41] FREE-CARRIER LIFETIME AND DEEP-LEVEL LUMINESCENCE IN SEMI-INSULATING GAAS - THE INFLUENCE OF INDIUM DOPING AND GROWTH IN A MAGNETIC-FIELD
    LEO, K
    RUHLE, WW
    NORDBERG, P
    FUJII, T
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) : 1800 - 1804
  • [42] Field effect on positron diffusion in semi-insulating GaAs
    Shan, YY
    AsokaKumar, P
    Lynn, KG
    Fung, S
    Beling, CD
    PHYSICAL REVIEW B, 1996, 54 (03): : 1982 - 1986
  • [43] Growth and properties of semi-insulating VGF-GaAs
    Buhrig, E
    Frank, C
    Hannig, C
    Hoffmann, B
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 248 - 251
  • [44] Growth and properties of semi-insulating VGF-GaAs
    TU Bergakademie Freiberg, Freiberg/Sachsen, Germany
    Mater Sci Eng B Solid State Adv Technol, 1-3 (248-251):
  • [45] APPEARANCE OF A NEGATIVE PEAK IN THE PITS SPECTRUM FROM GAAS LEC SEMI-INSULATING CRYSTALS
    OGAWA, M
    KAMIYA, T
    YANAI, H
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 571 - 572
  • [46] PHOTOINDUCED TRANSIENT SPECTROSCOPY PITS STUDY ON UNDOPED LEC GROWN SEMI-INSULATING GAAS
    FANG, ZQ
    SHAN, L
    SCHLESINGER, TE
    MILNES, AG
    SOLID-STATE ELECTRONICS, 1989, 32 (05) : 405 - 411
  • [47] Effects of activation annealing on thermally stimulated current in semi-insulating LEC GaAs substrates
    Yoshida, H.
    Kiyama, M.
    Takebe, T.
    Yamashita, M.
    Fujita, K.
    Materials Science Forum, 1995, 196-201 (pt 1): : 243 - 248
  • [48] DEEP LEVELS IN SEMI-INSULATING LEC GaAs BEFORE AND AFTER SILICON IMPLANTATION.
    Dindo, Salam
    Abdel-Motaleb, Ibrahim
    Lowe, Kerry
    Tang, Wade
    Young, Lawrence
    1600, (132):
  • [49] INHOMOGENEITY OF RESISTIVITY IN IN-DOPED DISLOCATION-FREE SEMI-INSULATING LEC GAAS
    MIYAIRI, H
    INADA, T
    OBOKATA, T
    NAKAJIMA, M
    KATSUMATA, T
    FUKUDA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09): : L729 - L732
  • [50] INFLUENCE OF MELT COMPOSITION ON UNIFORMITY OF ELECTRICAL-PROPERTIES IN SEMI-INSULATING LEC GAAS
    OBOKATA, T
    KATSUMATA, T
    FUKUDA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10): : L785 - L788
12345