SELECTIVE MOCVD GROWTH OF GaAs ON Si SUBSTRATE WITH SUPERLATTICE INTERMEDIATE LAYERS.

被引：0
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作者：
Soga, Tetsuo [1 ]
Sakai, Shiro [1 ]
Umeno, Masayoshi [1 ]
Hattori, Shuzo [1 ]
机构：
[1] Nagoya Univ, Nagoya, Jpn, Nagoya Univ, Nagoya, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 02期
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页码：252 / 255
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