STRESS AND STRAIN OF GAAS ON SI GROWN BY MOCVD USING STRAINED SUPERLATTICE INTERMEDIATE LAYERS AND A 2-STEP GROWTH METHOD

被引：26
|
作者：
SOGA, T
IMORI, T
UMENO, M
HATTORI, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1987年 / 26卷 / 05期
关键词：
D O I：
10.1143/JJAP.26.L536
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L536 / L538
页数：3
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