Study on the high temperature properties of bulk silicon, SOI and SiC MOS devices

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作者：
Feng, Yaolan
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来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2000年 / 20卷 / 01期
关键词：
Bulk silicon MOS devices - Silicon film technique;
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(Edited Abstract)
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页码：7 / 14
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