SiC junction control, an alternative to MOS control high voltage switching devices

This paper discusses for the first time the benefits of SiC junction control devices compared to MOS-type devices. Whereas MOS control silicon switching devices undoubtedly exhibit superior over-all performance compared to junction control devices due to reduced leakage, normally-off operation, high input impedance and improved SOA, this paper argues that SiC MOSFET devices have theoretical and practical disadvantages which may limit their operation and arguably bring back in light junction switching devices such as the JFET. In this study a numerical comparative view of two SiC devices, namely a trench MOSFET and a JFET, is provided. It is pointed out that the severe SiC MOSFET gate oxide limitations can be overcome by using a SiC JFET. To investigate the off-state behaviour of both devices, extensive numerical simulations using MEDICI and ISE TCAD have been carried out.