共 50 条
- [41] Excess carrier lifetime measurement for plasma-etched GaN by the microwave photoconductivity decay method JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (01): : 35 - 39
- [43] ON THE NATURE OF "NEGATIVE" ANNEALING OF THE NONEQUILIBRIUM CHARGE CARRIER LIFETIME IN IRRADIATED n-Si UKRAINIAN JOURNAL OF PHYSICS, 2007, 52 (02): : 162 - 166
- [46] Increase in Minority Carrier Lifetime Measured by Microwave Irradiation Method 2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS, 2012, : 285 - 288
- [48] PHASE METHOD FOR THE DETERMINATION OF THE LIFETIME OF NONEQUILIBRIUM CARRIERS IN PHOTOCONDUCTORS. Soviet journal of quantum electronics, 1979, 9 (10): : 1293 - 1296
- [50] CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (03): : 322 - 325