EFFECTS OF GROWTH TEMPERATURE AND SUBSTRATE ORIENTATION ON THE ENTRY OF TELLURIUM INTO EPITAXIAL GALLIUM ARSENIDE FILMS.

被引：0

作者：

Lavrent'eva, L.G. ^{[1
]}

Vilisova, M.D. ^{[1
]}

Moskovkin, V.A. ^{[1
]}

Toropov, S.E. ^{[1
]}

机构：

[1] V. D. Moskovkin, Siberian Physicotechnical Institute, Tomsk State University, Sux

来源：

| 1600年 / 25期

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[31] PHOTOLUMINESCENCE SPECTRA OF EPITAXIAL FILMS OF GALLIUM-ARSENIDE
MARONCHUK, YE
SHERSTYAKOV, AP
SHERSTYAKOVA, VN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1400 - 1401
[32] EPITAXIAL GALLIUM ARSENIDE FILMS WITH A HIGH ELECTRON MOBILITY
RZHANOV, AV
LISENKER, BS
MARONCHU.IE
MARONCHU.YE
SHERSTYA.AP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 593 - &
[33] ANALYSIS OF MOBILITY IN EPITAXIAL GALLIUM-ARSENIDE FILMS
KRAVCHENKO, AF
MOROZOV, BV
SKOK, EM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1831 - 1834
[34] RADIOACTIVATION DETERMINATION OF IMPURITIES IN EPITAXIAL FILMS OF GALLIUM ARSENIDE
SHULEPNI.MN
SHMANENK.GI
YAKOVLEV, YV
DOGADKIN, NN
ZHURNAL ANALITICHESKOI KHIMII, 1971, 26 (06): : 1167 - +
[35] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF EPITAXIAL FILMS OF GALLIUM ARSENIDE
ALFEROV, ZI
ZIMOGORO.NS
KOROLKOV, VI
PROTASOV, II
TRUKAN, MK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 225 - &
[36] ANOMALOUS MAGNITUDE AND TEMPERATURE DEPENDENCE OF MOBILITY OF ELECTRONS IN EPITAXIAL GALLIUM-ARSENIDE FILMS
ALEKSANDROVA, GA
VILKOTSK.VA
SKVORTSOV, IM
MARCHUKOV, LV
KORNILOV, BV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 857 - +
[37] BEHAVIOUR OF SELENIUM AND TELLURIUM DOPANTS IN SOLUTION GROWTH OF GALLIUM ARSENIDE
GREENE, PD
SOLID STATE COMMUNICATIONS, 1971, 9 (15) : 1299 - &
[38] EPITAXIAL GROWTH OF DEVICE QUALITY GALLIUM ARSENIDE LAYERS
BRADSHAW, A
KNAPPETT, JE
SOLID STATE TECHNOLOGY, 1970, 13 (10) : 45 - +
[39] EPITAXIAL GROWTH OF SEMI-INSULATING GALLIUM ARSENIDE
MIZUNO, O
KIKUCHI, S
SEKI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (02) : 208 - +
[40] EPITAXIAL GROWTH OF GALLIUM ARSENIDE BY USING SILICON TETRACHLORIDE
FURUKAWA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (11) : 1344 - &

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