EPITAXIAL GROWTH OF GALLIUM ARSENIDE BY USING SILICON TETRACHLORIDE

被引：3

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作者：

FURUKAWA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1967年 / 6卷 / 11期

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D O I：

10.1143/JJAP.6.1344

中图分类号：

O59 [应用物理学];

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页码：1344 / &

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