INITIAL-STAGES OF EPITAXIAL-GROWTH - GALLIUM-ARSENIDE ON SILICON

被引：23

|

作者：

ZINKEALLMANG, M

FELDMAN, LC

NAKAHARA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.99032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：144 / 146

页数：3

相关论文

共 50 条

[1] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE
BOUCHER, A
EASTON, BC
[J]. PHILIPS TECHNICAL REVIEW, 1971, 32 (9-12): : 380 - 384
[2] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON
BIEGELSEN, DK
PONCE, FA
SMITH, AJ
TRAMONTANA, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1856 - 1859
[3] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE LAYERS OF GERMANIUM SUBSTRATES
KAMADJIE.PR
SOTIROV, SS
[J]. DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1972, 25 (11): : 1499 - 1502
[4] EPITAXIAL GALLIUM-ARSENIDE GROWTH
不详
[J]. ELECTRONIC ENGINEERING, 1979, 51 (627): : 10 - 10
[5] INITIAL-STAGES IN THE EPITAXIAL-GROWTH OF NACL ON GE(001)
LUCAS, CA
WONG, GCL
DOWER, CS
LAMELAS, FJ
FUOSS, PH
[J]. SURFACE SCIENCE, 1993, 286 (1-2) : 46 - 55
[6] EFFECT OF TREATMENT OF THE SUBSTRATE SURFACE ON THE INITIAL-STAGES OF FORMATION OF GALLIUM-ARSENIDE FILMS
BOLKHOVITYANOV, YB
RUDAYA, NS
YUDAEV, VI
[J]. INORGANIC MATERIALS, 1993, 29 (01) : 21 - 25
[7] LIQUID-PHASE EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE ON AN ETCHED SUBSTRATE
NORDQUIST, PER
LESSOFF, H
SWIGGARD, EM
[J]. MATERIALS RESEARCH BULLETIN, 1976, 11 (08) : 939 - 945
[8] EPITAXIAL-GROWTH KINETICS OF GALLIUM-ARSENIDE FROM LIQUID-PHASE
ILKOV, LH
DJOGLEV, DH
[J]. DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1976, 29 (04): : 511 - 514
[9] LASER ENHANCED EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE FROM ELEMENTAL ARSENIC
CHU, TL
CHU, SS
GREEN, RF
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (06) : 503 - 507
[10] SELF-REGULATION OF EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE IN A CHLORIDE SYSTEM
FROLOV, IA
DRUZ, BL
AVERYANOV, VE
[J]. INORGANIC MATERIALS, 1982, 18 (09) : 1241 - 1243

← 1 2 3 4 5 →