共 50 条
- [1] Substrate leakage current in InGaP/GaAs heterojunction bipolar transistors JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2450 - 2453
- [3] Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors Semiconductors, 2015, 49 : 1361 - 1364
- [5] Temperature dependence of current gain of InGaP/InGaAsN/GaAs heterojunction bipolar transistors PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (09): : 2190 - 2193
- [7] Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2021, 258 (02):
- [9] InGaP heterojunction bipolar transistors COMPOUND SEMICONDUCTOR POWER TRANSISTORS AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIX), 1998, 98 (12): : 71 - 81
- [10] The effect of n-GaAs carrier concentration on current gain in InGaP/GaAs heterojunction bipolar transistors JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (8A): : 5122 - 5124