Orthogonal experiment on the technological process of Ta/Al alloy thin-film

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Univ of Electronic Science and, Technology, Chengdu, China ^{[1
]}

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Gongneng Cailiao | / 4卷 / 364-366期

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(Edited Abstract)

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[1] THE OXIDATION PROCESS AND DISSIPATION FACTOR OF AL/TA/HF MULTILAYERED ANODIZED THIN-FILM CAPACITORS
DOBASHI, T
UMEZAWA, T
SASAKI, K
NOYA, A
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1994, 77 (12): : 59 - 66
[2] HIGH RELIABILITY TA-AL THIN-FILM HYBRID CIRCUITS
DUCKWORTH, RG
MICROELECTRONICS AND RELIABILITY, 1976, 15 (02): : 141 - 146
[3] Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti and W
Colgan, E.G., 1600, (04):
[4] TA THIN-FILM CAPACITORS WITH AN AL UNDERLAY FOR HIGH-FREQUENCY APPLICATIONS
FEINSTEIN, LG
PAGANO, RJ
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1981, 4 (01): : 140 - 147
[5] THIN-FILM REACTIONS OF AL WITH CO, CR, MO, TA, TI, AND W
COLGAN, EG
MAYER, JW
JOURNAL OF MATERIALS RESEARCH, 1989, 4 (04) : 815 - 820
[6] PROPERTIES OF THIN-FILM CAPACITORS MADE WITH REACTIVELY SPUTTERED TA-AL
REDDY, PK
BHAGAVAT, GK
JAWALEKAR, SR
THIN SOLID FILMS, 1980, 72 (03) : 443 - 448
[7] THIN-FILM EXPERIMENT WITH BULK SUPERCONDUCTORS
MEISSNER, H
ZDANIS, R
PHYSICAL REVIEW, 1959, 113 (06): : 1435 - 1445
[8] A HYSTERESIS MODEL FOR AN ORTHOGONAL THIN-FILM MAGNETOMETER
DERIDDER, RM
FLUITMAN, JH
IEEE TRANSACTIONS ON MAGNETICS, 1990, 26 (04) : 1237 - 1245
[9] TA-AL-N THIN-FILM RESISTORS WITH IMPROVED ELECTRICAL-PROPERTIES
REDDY, PK
BHAGAVAT, GK
JAWALEKAR, SR
THIN SOLID FILMS, 1980, 70 (01) : 27 - 35
[10] INTERACTION PROCESS FOR AG-AL POLYCRYSTALLINE THIN-FILM COUPLES
BAGLIN, JEE
DHEURLE, FM
HAMMER, WN
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 266 - 275

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