PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM ARSENIDE.

An investigation was made of the recombination radiation and of the absorption of light by nonequilibrium carriers in undoped epitaxial gallium arsenide films subjected to excitation rates capable of producing nonequilibrium carriers in densities n equals p equals 10**1**7-10**1**8 cm** minus **3. When the quantum efficiency of radiative recombination was close to 100% and ordinary diffusion could be ignored, the photon transfer model was used to explain the observed dependence of the recombination radiation intensity J on the excitation intensity I, which was of the form J varies directly as I**4**/**3. This model also explained the increase in the decay time of the total number of nonequilibrium carriers in a film with increasing thickness. Numerical estimates were obtained of the depth of the nonequilibrium carrier distribution.