MODEL OF THE RESIDUAL PHOTOCONDUCTIVITY: GALLIUM ARSENIDE.

被引:0
|
作者
Dobrego, V.P.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
11 refs.
引用
收藏
页码:1309 / 1310
相关论文
共 50 条
  • [1] MODEL OF RESIDUAL PHOTOCONDUCTIVITY - GALLIUM-ARSENIDE
    DOBREGO, VP
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1309 - 1310
  • [2] PICOSECOND PHOTOCONDUCTIVITY OF INDIUM ARSENIDE.
    Adomaitis, E.
    Dobrovol'skis, Z.
    Krotkus, A.
    [J]. Soviet physics. Semiconductors, 1984, 18 (08): : 889 - 891
  • [3] ELECTROABSORPTION OF GALLIUM ARSENIDE.
    Bobylev, B.A.
    Kravchenko, A.F.
    Terekhov, A.S.
    [J]. 1635, (06):
  • [4] RESIDUAL DONOR IMPURITIES IN VAPOR PHASE EPITAXIAL GALLIUM ARSENIDE.
    Ozeki, Masahi
    Kitahara, Kuninori
    Nakai, Kenya
    [J]. 1600, (13):
  • [5] FASTER AND SMALLER WITH GALLIUM ARSENIDE.
    Grad, Paul
    [J]. Journal of the Institution of Engineers, Australia, 1988, 60 (17): : 16 - 18
  • [6] SURFACE WAVES IN GALLIUM ARSENIDE.
    Levin, M.D.
    Lobanova, G.A.
    Pashchin, N.S.
    Yakovkin, I.B.
    [J]. Soviet Physics, Acoustics (English translation of Akusticheskii Zhurnal), 1975, 21 (01): : 41 - 43
  • [7] RADIOELECTRIC EFFECT IN GALLIUM ARSENIDE.
    Kemarskii, V.A.
    Lyubchenko, V.E.
    [J]. 1600, (09):
  • [8] RESIDUAL PHOTOCONDUCTIVITY OF GALLIUM ARSENIDE AT VERY LOW TEMPERATURES
    SYTENKO, TN
    DMITRUK, NL
    LYASHENK.VI
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 1066 - &
  • [9] DECAY OF PHOTOLUMINESCENCE EMITTED BY GALLIUM ARSENIDE.
    Knab, O.D.
    Petrov, A.I.
    Frolov, V.D.
    Shveikin, V.I.
    Shmerkin, I.A.
    [J]. 1972, 5 (08): : 1429 - 1430
  • [10] AC CONDUCTION IN AMORPHOUS GALLIUM ARSENIDE.
    Mahavadi, K.K.
    Milne, W.I.
    [J]. Journal of Non-Crystalline Solids, 1986, 87 (1 & 2): : 30 - 42