共 50 条
- [1] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM-ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 526 - 529
- [2] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM-ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (01): : 41 - 43
- [3] SLOW RELAXATION OF NONEQUILIBRIUM CARRIERS IN PURE EPITAXIAL N-TYPE GALLIUM-ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (07): : 811 - 813
- [4] QUANTUM EFFICIENCY AND LIFETIME OF NONEQUILIBRIUM CARRIERS IN GALLIUM-ARSENIDE DIODES [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 733 - 735
- [5] INVESTIGATION OF PROCESSES OF RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN EPITAXIAL GALLIUM-ARSENIDE FILMS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (08): : 781 - 784
- [7] RECOMBINATION OF CARRIERS IN GALLIUM-ARSENIDE CONTAINING DEFECT CLUSTERS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (01): : 55 - 58