Polarographic and Photometric Determination of Iodides at Trace Levels in Gallium Arsenide.

被引:0
|
作者
Novak, Josef [1 ]
Vyhlidka, Pavel [1 ]
Flasarova, Marie [1 ]
机构
[1] Fyzikalni Ustav CSAV, Prague, Czech, Fyzikalni Ustav CSAV, Prague, Czech
来源
Chemicky prumysl | 1986年 / 36卷 / 04期
关键词
IODINE COMPOUNDS - PHOTOMETRY - Applications;
D O I
暂无
中图分类号
学科分类号
摘要
An analytical procedure is proposed for separation and determination of iodides at trace levels in powdered and monocrystalline gallium arsenide. Separation proceeds by means of the pyrohydrolytic method in a quartz apparatus at 560 to 580 degree C in a stream of overheated steam. The released hydrogen iodide is absorbed in 1. 10** minus **3M-NaOH or in a Britton-Robinson buffer (pH 9. 3). The amount of iodides present is determined by fast differential pulse polarography. The polarographic method is more reliable and more precise than the photometry - where bromine water is used to oxidize iodide to iodine.
引用
收藏
页码:184 / 187
相关论文
共 50 条
  • [21] VECTOR-POLAROGRAPHIC DETERMINATION OF TIN IN GALLIUM, ARSENIC, GALLIUM PHOSPHIDE, AND GALLIUM ARSENIDE
    KAPLAN, BY
    SEVASTYA.TN
    SHIRYAEV.OA
    INDUSTRIAL LABORATORY, 1971, 37 (01): : 16 - &
  • [22] KINETICS OF DECAY OF THE ″IMPURITY″ LUMINESCENCE OF GALLIUM ARSENIDE.
    Glinchuk, K.D.
    Lukat, K.
    Rodionov, V.E.
    Soviet physics. Semiconductors, 1981, 15 (07): : 772 - 775
  • [23] ELECTRON SPIN RESONANCE OF ERBIUM IN GALLIUM ARSENIDE.
    Baeumler, M.
    Schneider, J.
    Koehl, F.
    Tomzig, E.
    1600, (20):
  • [24] MAGNETORESISTANCE AND HALL EFFECT IN SEMIINSULATING GALLIUM ARSENIDE.
    Bumai, Yu.A.
    Vas'kov, O.S.
    Vil'kotskii, V.A.
    Domanevskii, D.S.
    Soviet physics. Semiconductors, 1984, 18 (11): : 1239 - 1242
  • [25] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM ARSENIDE.
    BLAKEMORE, J.S.
    1982, V 53 (N 10):
  • [26] INVESTIGATION OF THE NEUTRAL STATE OF COBALT IMPURITIES IN GALLIUM ARSENIDE.
    Andrianov, D.G.
    Savel'ev, A.S.
    Suchkova, N.I.
    Rashevskaya, E.P.
    Filippov, M.A.
    1977, 11 (08): : 858 - 860
  • [27] INFLUENCE OF DEEP LEVELS ON THE SPACE-CHARGE CAPACITANCE AND THE FIELD EFFECT IN GALLIUM ARSENIDE.
    Dmitruk, N.L.
    Tereshchenko, A.K.
    Maeva, O.I.
    Lyashenko, V.I.
    Raskevich, A.M.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (04): : 469 - 473
  • [28] NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM ARSENIDE.
    Voronkov, V.V.
    Voronkova, G.I.
    Kalinushkin, V.P.
    Murin, D.I.
    Omel'yanovskii, E.M.
    Pervova, L.Ya.
    Prokhorov, A.M.
    Raikhshtein, V.I.
    Soviet physics. Semiconductors, 1984, 18 (08): : 854 - 856
  • [29] HYDROGEN PASSIVATION OF GRAIN BOUNDARIES IN POLYCRYSTALLINE GALLIUM ARSENIDE.
    Pearton, S.J.
    Tavendale, A.J.
    1600, (54):
  • [30] INFLUENCE OF ISOELECTRONIC IMPURITIES ON INTRINSIC DEEP LEVELS IN LIQUID PHASE EPITAXIAL GALLIUM ARSENIDE.
    Kalukhov, V.A.
    Chikichev, S.I.
    Physica Status Solidi (A) Applied Research, 1985, 88 (01):