NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM ARSENIDE.

被引：0

作者：

Voronkov, V.V. ^{[1
]}

Voronkova, G.I. ^{[1
]}

Kalinushkin, V.P. ^{[1
]}

Murin, D.I. ^{[1
]}

Omel'yanovskii, E.M. ^{[1
]}

Pervova, L.Ya. ^{[1
]}

Prokhorov, A.M. ^{[1
]}

Raikhshtein, V.I. ^{[1
]}

机构：

[1] Acad of Sciences of the USSR, Inst, of General Physics, Moscow, USSR, Acad of Sciences of the USSR, Inst of General Physics, Moscow, USSR

来源：

Soviet physics. Semiconductors | 1984年 / 18卷 / 08期

关键词：

LASERS; CARBON DIOXIDE - Testing - SEMICONDUCTING GALLIUM ARSENIDE - Applications - SEMICONDUCTOR DEVICES - Materials;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The method of low-angle scattering of CO//2 laser radiation was applied to semiinsulating GaAs and for the first time it revealed impurity inhomogeneities with a characteristic (radius) of approximately 6-20 mu and a carrier density approximately 10**1**6 cm** minus **3. The influence of temperature on the light-scattering diagrams and the effects of heat treatment on the characteristic parameters of these microinclusions were investigated.

引用

页码：854 / 856

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