共 50 条
- [31] BROADBAND MONOLITHIC INTEGRATED POWER AMPLIFIERS IN GALLIUM ARSENIDE. Microwave journal, 1982, 25 (11): : 87 - 94
- [32] Structural Inhomogeneities of Anodic Oxide Films on Gallium Arsenide. Neorganiceskie materialy, 1981, 17 (05): : 769 - 774
- [33] DETERMINATION OF TRACE IMPURITIES IN GALLIUM-ARSENIDE BY NAA JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 1993, 168 (02): : 449 - 455
- [34] LASER ANNEALING OF POINT DEFECTS IN SILICON AND GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1980, 14 (03): : 251 - 252
- [36] DIFFERENTIAL PULSE POLAROGRAPHIC-DETERMINATION OF CHROMIUM IN GALLIUM-ARSENIDE FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1982, 313 (07): : 539 - 541
- [37] SOME PROPERTIES OF CHROMIUM-DOPED GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (07): : 958 - 959
- [38] INFLUENCE OF IMPURITIES ON THE ENERGY OF STACKING FAULTS IN GALLIUM ARSENIDE. Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1980, 22 (02): : 279 - 282
- [39] PROPERTIES OF IRON-DOPED SEMIINSULATING GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 311 - 316
- [40] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (05): : 526 - 529