DETERMINATION OF DEEP TRAP LEVELS CAUSED BY ION IMPLANTED IMPURITIES IN SILICON.

被引：0
|
作者：
Schulz, M.
机构：
来源：
| 1974年
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中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
A new capacitance-voltage measurement technique on Schottky barrier contacts is described which permits an easy and quick determination of energy levels, charge, and concentration profiles. The technique has been applied to obtain data for 29 different elements implanted into silicon. The deep levels were measured after annealing of the radiation damage. Most of the energy levels determined agree with values known from the literature, but special levels associated with the implantation technique were also found.
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页码：226 / 233
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