Raman spectroscopic study of ion-implanted and annealed silicon.

被引：0
|
作者：
Tuschel, DD [1 ]
Lavine, JP [1 ]
Russell, JB [1 ]
机构：
[1] EASTMAN KODAK CO,IMAGING RES & ADV DEV,ROCHESTER,NY 14650
来源：
DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II | 1996年 / 406卷
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
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页码：549 / 554
页数：6
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