DETERMINATION OF DEEP TRAP LEVELS CAUSED BY ION IMPLANTED IMPURITIES IN SILICON.

被引：0
|
作者：
Schulz, M.
机构：
来源：
| 1974年
关键词：
D O I：
暂无
中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
A new capacitance-voltage measurement technique on Schottky barrier contacts is described which permits an easy and quick determination of energy levels, charge, and concentration profiles. The technique has been applied to obtain data for 29 different elements implanted into silicon. The deep levels were measured after annealing of the radiation damage. Most of the energy levels determined agree with values known from the literature, but special levels associated with the implantation technique were also found.
引用
收藏
页码：226 / 233
相关论文
共 50 条
  • [11] STUDY OF ATOMIC AND MOLECULAR ARSENIC ION-IMPLANTED SILICON.
    Delfino, M.
    Sadana, D.K.
    Morgan, A.E.
    1900, (133):
  • [12] LATERAL SPREAD OF ION-IMPLANTED IMPURITIES IN SILICON
    PAN, E
    FANG, FF
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2801 - 2803
  • [13] CALCULATION OF ENERGY LEVELS OF THE SHALLOW AND DEEP DONORS IN SILICON.
    Niculescu, E.
    Marian, P.
    Popescu, I.M.
    1600, (30):
  • [14] DLTS STUDY OF THE DEEP LEVELS IN PLATINUM DOPED SILICON.
    You Zhipu
    Gong Min
    Chen Jiyong
    Cui Xinqiang
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1986, 7 (01): : 85 - 88
  • [15] DEEP LEVELS IN ARSENIC IMPLANTED SILICON
    KRYNICKI, J
    BOURGOIN, JC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 437 - 440
  • [16] INFLUENCE OF EXCESS VACANCY GENERATION ON THE DIFFUSION OF ION IMPLANTED PHOSPHORUS INTO SILICON.
    Bakowski, Aleksander
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1985, B7-8 (pt 1) : 352 - 356
  • [17] CHANNELING PHENOMENA IN OFF-AXIS ION IMPLANTED (001) SILICON.
    Cembali, F.
    Servidori, M.
    Mazzone, A.M.
    1600, (12):
  • [18] THE EFFECT OF SPUTTERED IMPURITIES ON THE DEEP ION-IMPLANTED P+N JUNCTION IN SILICON
    ZAMASTIL, J
    MAY, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 370 - 371
  • [19] DEEP-LEVEL DEFECTS IN ION-IMPLANTED AND CO2 LASER-ANNEALED SILICON.
    Bao Ximao
    Zhang Xinyu
    Liu Cheng'en
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1985, 6 (01): : 11 - 18
  • [20] DIRECTIONAL DISTRIBUTION OF BURGERS VECTORS OF DISLOCATION LOOPS IN ION-IMPLANTED SILICON.
    Komarov, F.F.
    Solovev, V.S.
    Shiryaev, S.YU.
    Radiation effects letters, 1981, 58 (06): : 177 - 181
12345