Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient

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作者：
机构：
[1] Chen, X.Y.
[2] Lu, Y.F.
[3] Wu, Y.H.
[4] Cho, B.J.
[5] Liu, M.H.
[6] Dai, D.Y.
[7] Song, W.D.
来源：
Lu, Y.F. (yflu@engr.unl.edu) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Annealing - Argon - Crystal structure - Crystals - Electrochemistry - Interfaces (materials) - Morphology - Oxidation - Oxygen - Photoluminescence - Pulsed laser deposition - Quantum theory - Silicon - Surfaces;
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摘要：
The different mechanisms of photoluminescence (PL) of silicon nanocrystals due to quantum confinement effect (QCE) and interface states were studied. Si nanocrystals were formed by pulsed-laser deposition in inert argon and reactive oxygen gas. The PL band at 2.55 eV showed vibronic structures with periodic spacing of 97±9 meV.
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