Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient

被引：0
|
作者：
机构：
[1] Chen, X.Y.
[2] Lu, Y.F.
[3] Wu, Y.H.
[4] Cho, B.J.
[5] Liu, M.H.
[6] Dai, D.Y.
[7] Song, W.D.
来源：
Lu, Y.F. (yflu@engr.unl.edu) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Annealing - Argon - Crystal structure - Crystals - Electrochemistry - Interfaces (materials) - Morphology - Oxidation - Oxygen - Photoluminescence - Pulsed laser deposition - Quantum theory - Silicon - Surfaces;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The different mechanisms of photoluminescence (PL) of silicon nanocrystals due to quantum confinement effect (QCE) and interface states were studied. Si nanocrystals were formed by pulsed-laser deposition in inert argon and reactive oxygen gas. The PL band at 2.55 eV showed vibronic structures with periodic spacing of 97±9 meV.
引用
收藏
相关论文
共 50 条
  • [31] Control of polytype formation in silicon carbide heteroepitaxial films by pulsed-laser deposition
    Kusumori, T
    Muto, H
    Brito, ME
    APPLIED PHYSICS LETTERS, 2004, 84 (08) : 1272 - 1274
  • [32] Surface and texture characterization of thin-film ZnTe formed with pulsed-laser deposition
    Erlacher, Artur
    Lukaszew, Alejandra R.
    Jaeger, Herbert
    Ullrich, Bruno
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (04): : 1623 - 1626
  • [33] Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass
    Erlacher, A
    Ambrico, A
    Perna, G
    Schiavulli, L
    Ligonzo, T
    Jaeger, H
    Ulrich, B
    APPLIED SURFACE SCIENCE, 2005, 248 (1-4) : 402 - 405
  • [34] Absorption and photocurrent properties of thin ZnS films formed by pulsed-laser deposition on quartz
    Yano, S
    Schroeder, R
    Ullrich, B
    Sakai, H
    THIN SOLID FILMS, 2003, 423 (02) : 273 - 276
  • [35] DETERMINATION OF LIMITS IN DEPOSITION OF ADHERING A-C FILMS ON SILICON PRODUCED BY PULSED-LASER DEPOSITION
    ZEHNDER, T
    BALMER, J
    LUTHY, W
    WEBER, HP
    THIN SOLID FILMS, 1995, 263 (02) : 198 - 202
  • [36] Structural and surface analysis of thin-film ZnTe formed with pulsed-laser deposition
    Erlacher, Artur
    Lukaszew, Alejandra R.
    Jaeger, Herbert
    Ullrich, Bruno
    SURFACE SCIENCE, 2006, 600 (18) : 3762 - 3765
  • [37] Optoelectronic properties of thin film CdS formed by ultraviolet and infrared pulsed-laser deposition
    Ullrich, B
    Sakai, H
    Segawa, Y
    THIN SOLID FILMS, 2001, 385 (1-2) : 220 - 224
  • [38] Mechanisms for O2 dissociation during pulsed-laser ablation and deposition
    Camposeo, A
    Cervelli, F
    Fuso, F
    Allegrini, M
    Arimondo, E
    APPLIED PHYSICS LETTERS, 2001, 78 (16) : 2402 - 2404
  • [39] PULSED-LASER DEPOSITION OF EPITAXIAL SILICON/H-PR2O3/SILICON HETEROSTRUCTURES
    TARSA, EJ
    SPECK, JS
    ROBINSON, M
    APPLIED PHYSICS LETTERS, 1993, 63 (04) : 539 - 541
  • [40] Preparation of silicon carbide nano-particles using a pulsed-laser deposition method
    Kawasaki, H
    Suda, Y
    Ohshima, T
    Ueda, T
    Nakashima, S
    NANOPARTICLES AND NANOWIRE BUILDING BLOCKS-SYNTHESIS, PROCESSING, CHARACTERIZATION AND THEORY, 2004, 818 : 241 - 246
12345