PREPARATION OF SILICON OXYNITRIDE (SIOXNY) THIN-FILMS BY PULSED-LASER DEPOSITION

被引：10
|
作者：
XIAO, RF
NG, LC
JIANG, C
YANG, Z
WONG, GKL
机构：
[1] Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
来源：
THIN SOLID FILMS | 1995年 / 260卷 / 01期
关键词：
NITRIDES; SILICON; PULSED LASER DEPOSITION;
D O I：
10.1016/0040-6090(95)09481-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The pulsed laser deposition technique was used to grow silicon oxynitride (SiOxNy) thin films at low temperatures (25-300 degrees C). The thin films were found to be smooth in surface morphology, extremely inert in HF/H2O solution, and highly transparent in the optical range from 0.3 mu m to 5 mu m. The refractive index is tunable between 1.4 and 2.1 by the addition of oxygen in substitution for nitrogen in the thin films.
引用
收藏
页码：10 / 13
页数：4
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