Stability of charge storage and property of charge transport of Si3N4/SiO2 double layer electret based on Si substrate

被引：0
|
作者：
Zhang, Xiaoqing [1 ]
Xia, Zhongfu [1 ]
Pan, Yonggang [1 ]
Zhang, Yewen [1 ]
机构：
[1] Tongji Univ, Shanghai, China
来源：
Gongneng Cailiao/Journal of Functional Materials | 2000年 / 31卷 / 05期
关键词：
D O I：
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学科分类号：
摘要：
Electrets
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页码：476 / 478
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