共 50 条
- [41] PHOTOCAPACITANCE STUDY OF DEFECT CENTER STRUCTURE IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 28 - 31
- [42] NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1984, 18 (08): : 854 - 856
- [44] RECOMBINATION OF CARRIERS IN GALLIUM-ARSENIDE CONTAINING DEFECT CLUSTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (01): : 55 - 58
- [45] EFFECT OF THE INTERFACE ON RADIATION DEFECT FORMATION IN GALLIUM-ARSENIDE RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 249 - 252
- [48] Native point defect equilibria and the phase extent of gallium arsenide ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 179 - 187
- [50] EFFECT OF ELECTRON IRRADIATION ON PARAMETERS OF GALLIUM ARSENIDE PULSE DIODES IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1970, (04): : 109 - &