Defect levels in gallium arsenide after irradiation with light ions

被引:0
|
作者
Schmidt, T.
Palmetshofer, L.
Luebke, K.
机构
来源
Acta Physica Polonica A | 1995年 / 87卷 / 2 pt 2期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] PHOTOCAPACITANCE STUDY OF DEFECT CENTER STRUCTURE IN GALLIUM-ARSENIDE
    GLORIOZOVA, RI
    KOLESNIK, LI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 28 - 31
  • [42] NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM ARSENIDE.
    Voronkov, V.V.
    Voronkova, G.I.
    Kalinushkin, V.P.
    Murin, D.I.
    Omel'yanovskii, E.M.
    Pervova, L.Ya.
    Prokhorov, A.M.
    Raikhshtein, V.I.
    Soviet physics. Semiconductors, 1984, 18 (08): : 854 - 856
  • [43] ROLE OF ARSENIC ANTISITE DEFECT IN NONSTOICHIOMETRIC GALLIUM-ARSENIDE
    JASINSKI, J
    KURPIEWSKI, A
    KORONA, K
    KAMINSKA, M
    PALCZEWSKA, M
    KROTKUS, A
    MARCINKIEVICIUS, S
    LILIENTALWEBER, Z
    TAN, HH
    JAGADISH, C
    ACTA PHYSICA POLONICA A, 1995, 88 (04) : 747 - 750
  • [44] RECOMBINATION OF CARRIERS IN GALLIUM-ARSENIDE CONTAINING DEFECT CLUSTERS
    LOMAKO, VM
    STAROSTIN, PY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (01): : 55 - 58
  • [45] EFFECT OF THE INTERFACE ON RADIATION DEFECT FORMATION IN GALLIUM-ARSENIDE
    BORKOVSKAYA, OY
    DMITRUK, NL
    KONAKOVA, RV
    LITOVCHENKO, VG
    TKHORIK, YA
    SHAKHOVTSOV, VI
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 249 - 252
  • [46] DFT calculation of EPR parameters of antisite defect in gallium arsenide
    Esteves, Marcos C.
    Rocha, Alexandre B.
    Vugman, Ney V.
    Bielschowsky, Carlos E.
    CHEMICAL PHYSICS LETTERS, 2008, 453 (4-6) : 188 - 191
  • [48] Native point defect equilibria and the phase extent of gallium arsenide
    Hurle, DTJ
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 179 - 187
  • [49] LIGHT-EMITTING FORMED-POINT-CONTACT GALLIUM ARSENIDE + GALLIUM ARSENIDE-PHOSPHIDE DIODES
    KIBLER, LU
    BURRUS, CA
    TRAMBARULO, RF
    PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 850 - &
  • [50] EFFECT OF ELECTRON IRRADIATION ON PARAMETERS OF GALLIUM ARSENIDE PULSE DIODES
    BRUDNYI, VN
    VILISOV, AA
    VYATKIN, AP
    KRIVOV, MA
    MALYANOV, SV
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1970, (04): : 109 - &