Defect levels in gallium arsenide after irradiation with light ions

被引:0
|
作者
Schmidt, T.
Palmetshofer, L.
Luebke, K.
机构
来源
Acta Physica Polonica A | 1995年 / 87卷 / 2 pt 2期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] LUMINESCENCE MEASUREMENT OF DOPING LEVELS IN GALLIUM ARSENIDE
    TUCK, B
    NON-DESTRUCTIVE TESTING, 1968, 1 (06): : 401 - &
  • [32] SHALLOW DONOR LEVELS IN GALLIUM-ARSENIDE
    BASHENOV, VK
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 59 (02): : K93 - K96
  • [33] Degradation of gallium arsenide under irradiation with an excimer laser
    Gradoboev, V
    Fedorov, AI
    TECHNICAL PHYSICS, 2000, 45 (10) : 1271 - 1275
  • [34] Microdoping of subsurface gallium arsenide layers with hydrogen ions
    Anisimov, VV
    Demkin, VP
    Kvint, IA
    Mel'nichuk, SV
    Semukhin, BS
    TECHNICAL PHYSICS, 2000, 45 (02) : 260 - 262
  • [35] Microdoping of subsurface gallium arsenide layers with hydrogen ions
    V. V. Anisimov
    V. P. Demkin
    I. A. Kvint
    S. V. Mel’nichuk
    B. S. Semukhin
    Technical Physics, 2000, 45 : 260 - 262
  • [36] Features of isovalent doping of gallium arsenide with bismuth ions
    Zdoroveyshchev, D. A.
    Vikhrova, O. V.
    Danilov, Yu. A.
    Dudin, Yu. A.
    Zdoroveyshchev, A. V.
    Parafin, A. E.
    Drozdov, M. N.
    ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2024, 17 (01): : 20 - 24
  • [37] EFFECT OF NEUTRON-IRRADIATION ON DIFFUSION OF ZINC IN INDIUM ARSENIDE AND GALLIUM-ARSENIDE
    SAVIN, EP
    BOLTAKS, BI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (07): : 1173 - +
  • [38] NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM-ARSENIDE
    VORONKOV, VV
    VORONKOVA, GI
    KALINUSHKIN, VP
    MURIN, DI
    OMELYANOVSKII, EM
    PERVOVA, LY
    PROKHOROV, AM
    RAIKHSHTEIN, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 854 - 856
  • [39] IDENTIFICATION OF A TRIGONAL CATION ANTISITE DEFECT IN GALLIUM-ARSENIDE
    KRAMBROCK, K
    MEYER, BK
    SPAETH, JM
    PHYSICAL REVIEW B, 1989, 39 (03): : 1973 - 1976
  • [40] Native point defect equilibria and the phase extent of gallium arsenide
    Hurle, D.T.J.
    Materials Science Forum, 1995, 196-201 (pt 1): : 179 - 188